An IGBT-based plasma power supply utilizes insulated-gate bipolar transistors (IGBTs) as switching devices in a high-frequency inverter circuit to generate and control the power needed for plasma applications. These power supplies are favored for their efficiency, high power handling capabilities, and precise control over the plasma discharge, making them suitable for various industrial and research applications.
Technical Specification:
| Mains Input |
415V(+-10V), 3 Phase, 50Hz |
| Maximum DC Output |
150V, 10A to 400A- variable |
| DC Output O.C.V |
300V |
| Efficiency of Power Supply |
Equal or better than 80% |
| Power Factor |
Equal or better than 0.9 at full load |
| Ripple Factor |
Equal or better than 1% of open circuit voltage |
| Type of Source |
Constant current source |
| Mode of Power Supply |
Switching mode power supply |
| Switching Component |
IGBT based full bridge topology |
Advantages:
•Including High Efficiency.
•Fast Switching Speeds.
•Robust Performance.
•Precise Power Control.
•Superior Power Quality.
Applications:
•Thermal Plasma Torches.
•Waste Treatment.
•Material Processing.
•Aerospace Propulsion.
•Research and Development.
At Embsoft, we believe in moulding our products based on customer needs, so feel free to contact us anytime to tell us your exact requirements.
